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| 2N5210 Discrete POWER & Signal Technologies 2N5210 C BE TO-92 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 50 50 4.5 100 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N5210 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation 2N5210 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, IB = 0 IC = 0.1 mA, IE = 0 VCB = 35 V, IE = 0 VEB = 3.0 V, IC = 0 50 50 50 50 V V nA nA ON CHARACTERISTICS hFE DC Current Gain IC = 100 A, VCE = 5.0 V IC = 1.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V* IC = 10 mA, IB = 1.0 mA IC = 1.0 mA, VCE = 5.0 V 200 250 250 600 VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage 0.7 0.85 V V SMALL SIGNAL CHARACTERISTICS fT Ccb hfe NF Current Gain - Bandwidth Product Collector-Base Capacitance Small-Signal Current Gain Noise Figure IC = 500 A,VCE = 5.0 V, f= 20 MHz VCB = 5.0 V, IE = 0, f = 100 kHz IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz IC = 20 A, VCE = 5.0 V, RS = 22 k, f = 10 Hz to 15.7 kHz IC = 20 A, VCE = 5.0 V, RS = 10 k, f = 1.0 kHz 30 4.0 250 900 2.0 3.0 dB dB MHz pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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